Abstract

Nanowire devices are emerging as the replacement technology to planar devices, such as Light Emitting Diodes (LEDs) and Field Effect Transistors (FETs), due to better performance and higher device densities. Here, top-down GaN nanowire fabrication is studied through the use of dry and wet etching techniques. Specifically, dry etching is studied focusing on the effects of etching power, pressure, and the use of chloroform during the process. Wet etching of GaN nanowires takes the initial structures formed by the dry etch to create the desired high aspect ratio, tunable-diameter nanowires. Effects of etching time, temperature, concentration, and ability to remove etch damage are thoroughly studied. Insights of these results are utilized to form high aspect ratio vertical wires with diameters smaller than 100 nm for high performance GaN devices.

Publication Date

7-2018

Document Type

Thesis

Student Type

Graduate

Degree Name

Materials Science and Engineering (MS)

Department, Program, or Center

School of Chemistry and Materials Science (COS)

Advisor

Jing Zhang

Advisor/Committee Member

Robert Pearson

Advisor/Committee Member

Karl Hirschman

Campus

RIT – Main Campus

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