Abstract

Understanding of quantum tunneling phenomenon in semiconductor systems is increasingly important as CMOS replacement technologies are investigated. This work studies a variety of heterojunction materials and types to increase tunnel currents to CMOS competitive levels and to understand how integration onto Si substrates affects performance. Esaki tunnel diodes were grown by Molecular Beam Epitaxy (MBE) on Si substrates via a graded buffer and control Esaki tunnel diodes grown on lattice matched substrates for this work. Peak current density for each diode is extracted and benchmarked to build an empirical data set for predicting diode performance. Additionally, statistics are used as tool to show peak to valley ratio for the III-V on Si sample and the control perform similarly below a threshold area. This work has applications beyond logic, as multijunction solar cell, heterojunction bipolar transistor, and light emitting diode designs all benefit from better tunnel contact design.

Library of Congress Subject Headings

Tunnel diodes--Testing; Metal oxide semiconductors, Complementary

Publication Date

6-9-2015

Document Type

Dissertation

Student Type

Graduate

Degree Name

Microsystems Engineering (Ph.D.)

Department, Program, or Center

Microsystems Engineering (KGCOE)

Advisor

Sean L. Rommel

Advisor/Committee Member

Santosh Kurinec

Advisor/Committee Member

Seth Hubbard

Comments

Physical copy available from RIT's Wallace Library at TK7871.87 .T46 2015

Campus

RIT – Main Campus

Plan Codes

MCSE-PHD

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