An antireflection coating (ARC) containing polyvinyl alcohol and two dyes was applied to a substrate to form a new multilayer resist system.
Based on the results of the application of the ARC on a planar aluminum substrate, an increase of the latitude of exposure and an improvement of the resist image quality were found.
The ARC had a specific concentration of dyes and a specific thickness. The image was a 1.0 µm line and space pattern. By using the ARC, even though the resist thickness varied from 1.2 µm to 1.5 µm, the resulting 1.0 µm image remained within a ±10% tolerance range.
This result was then used to apply the ARC technique on an uneven aluminum substrate with a 0.5 µm height step. The final aluminum image was obtained by transferring the positive resist image to the aluminum film. The ARC film can be etched by using the same plasma etching as was used for the aluminum film without extra processing steps. Electron micrographs of 1.0 µm line images of resist and aluminum with the ARC technique were compared with the resist and aluminum 1.0 µm line images without ARC as a demonstration of the effectiveness of this technique in improving image quality.
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School of Photographic Arts and Sciences (CIAS)
Wu, Chung-Ta, "The application and analysis of an antireflection coating on a multilayer resist system to generate a 1.0 µm aluminum line over 0.5 µm SiO2 step" (1982). Thesis. Rochester Institute of Technology. Accessed from
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