Chris Maloney

Abstract

For EUVL to be enabled for HVM, the printing of densely spaced die must be allowed. To achieve this requirement, a mitigation strategy to compensate for field edge effects is vital. This study has two goals. First, we will show that field edge effects can be modeled for reticles with an absorber border and for those with an etched ML border. The second is to investigate the limitations that exist when compensating for field edge effects with OPC, including image quality, REMA blade stability and OoB variability. This thesis shows that for different reticles different mitigation strategies are required in order to enable EUV HVM.

Library of Congress Subject Headings

Extreme ultraviolet lithography; Imaging systems--Image quality; Ultraviolet radiation--Industrial applications; Semiconductors--Design and construction; Mass production

Publication Date

2-2014

Document Type

Thesis

Student Type

Graduate

Degree Name

Microelectronic Engineering (MS)

Department, Program, or Center

Microelectronic Engineering (KGCOE)

Advisor

Robert Pearson

Advisor/Committee Member

Bruce W. Smith

Advisor/Committee Member

Dale Ewbank

Comments

Physical copy available from RIT's Wallace Library at TK7872.M3 M35 2014

Campus

RIT – Main Campus

Plan Codes

MCEE-MS

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