Abstract

eports the first demonstration of the integration of CMOS and Si/SiGe resonant interband tunnel diode (RITD). In Si-based material, recent breakthrough in Si/SiGe RITD grown using molecular beam epitaxy (MBE) made the integration with CMOS possible. The resultant devices enabled the realization of RITD CMOS circuitry, and a NMOS-RITD MOBILE latch was demonstrated in Si, all enabling digital and ternary circuit design for density storage

Library of Congress Subject Headings

Metal oxide semiconductors, Complementary; Digital integrated circuits; Silicon diodes

Publication Date

2003

Document Type

Thesis

Department, Program, or Center

Microelectronic Engineering (KGCOE)

Advisor

Kurinec, Santosh

Advisor/Committee Member

Rommel, Sean

Advisor/Committee Member

Hirschman, Karl

Comments

Note: imported from RIT’s Digital Media Library running on DSpace to RIT Scholar Works. Physical copy available through RIT's The Wallace Library at: TK7871.99.M44 S73 2003

Campus

RIT – Main Campus

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