A static coating program and a spray/static development program were developed, for use on the Wafertrac 9000 using Kodak Micro Positive 820 resist and developer ZX-934 in order to minimize critical dimension shift and maximize process latitude. By maximizing process latitude, a greater tolerance for process and equipment errors can be achieved. Using the established process, 1.2µm resist lines were produced and critical dimension shift was minimized providing a process with wide process latitude for creating photoresist geometries with dimensions larger than 1.2µm.
Library of Congress Subject Headings
Integrated circuits--Design and construction--Data processing; Photolithography--Data processing; Microelectronics--Data processing
Imaging Science (BS)
Department, Program, or Center
School of Photographic Arts and Sciences (CIAS)
McFarland, Janet Chapin, "Characterization of G.C.A. Wafertrac 9000 using Kodak Micro Positive 820 Resist and Developer ZX-934" (1985). Thesis. Rochester Institute of Technology. Accessed from
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