Abstract

In this paper, a model for predicting the quantum efficiency and responsivity of silicon based solid state photodiodes is presented. The model is first developed using semiconductor theory and then implemented in a computer software program. Correct operation of the modeling program is verified by comparing the published reflectance curves of several silicon dioxide-silicon substrate samples with the reflectance curves produced by the modeling program. Next, a system capable of measuring photodiode quantum efficiency and responsivity is presented and used to measure quantum efficiency and responsivity for a photodiode specimen. Finally, the measured and modeled quantum efficiency and responsivity results for the photodiode specimen are compared and found to be in good agreement.

Library of Congress Subject Headings

Optoelectronic devices--Testing; Diodes, Semiconductor--Testing; Light absorption--Computer simulation

Publication Date

1-1-1990

Document Type

Thesis

Department, Program, or Center

Electrical Engineering (KGCOE)

Advisor

Fuller, Lynn

Comments

Note: imported from RIT’s Digital Media Library running on DSpace to RIT Scholar Works. Physical copy available through RIT's The Wallace Library at: TA1750 .P44 1990

Campus

RIT – Main Campus

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