The feasibility of photographic speed values for positive photoresist is evaluated. Speed is defined as the reciprocal of exposure necessary to produce a desired response. An outline of the microlithographic process, the chemistry of positive resist, and previous exposure models precede the experimental body of work to facilitate understanding of the photoresist system. The experimental method proposes a mathematical model describing the resist response to exposure. Photographic speed values result from this model. They are tested for sensitivity to process changes using Analysis of Variance. One speed definition is chosen as a possible standard and process control. It is based on the exposure required to produce a resist thickness of .4 microns above the under-lying substrate.
Library of Congress Subject Headings
Photoresists; Masks (Electronics); Photolithography
Department, Program, or Center
School of Photographic Arts and Sciences (CIAS)
Flagello, Donis, "The evaluation of positive photoresist speed" (1981). Thesis. Rochester Institute of Technology. Accessed from
RIT – Main Campus