Abstract

A majority of new integrated circuit designs are being fabricated in CMOS technology which uses both pMOSFETs and nMOSFETS. The nMOSFETS have been well characterized over the past few years whereas the pMOSFETs have been ignored since MOS technology moved to nMOS in the early 70 's. Investigation of pMOS devices will provide information that will be useful for other technologies such as CMOS. This paper looks at the design, fabrication, fabrication simulation, electrical characterization, electrical simulation and testing of digital pMOSFET circuits. A particular emphasis will be placed on understanding the process so that first time integrated circuit processors will gain the maximum knowlege and obtain working devices.

Library of Congress Subject Headings

Digital integrated circuits--Design and construction

Publication Date

5-1-1986

Document Type

Thesis

Advisor

Turkman, Renan

Advisor/Committee Member

Heintz, Roger

Advisor/Committee Member

Ellis, John

Comments

Note: imported from RIT’s Digital Media Library running on DSpace to RIT Scholar Works in December 2013.

Physical copy available from RIT's Wallace Library at TK7874.P42 1986

Campus

RIT – Main Campus

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