Abstract

A microelectronic fabrication process for an all-transparent electrode, pseudo two-phase CCD image sensor pixel, resistant to DC shorting and compatible with a self-aligned barrier implant, was proposed, boasting the advantage of simple and cost-effective fabrication combined with high responsivity over the entire wavelength spectrum of visible light. The feasibility of such a process was proven by fabricating, testing, and analyzing a DC version of the device structure. Work entailed individual process design and development, integration of unit processes into a manufacturing flow, fabrication, testing, and failure analysis. Countermeasures to high-frequency failure modes were implemented as part of the second-generation design. Prototype devices were fabricated and tested for DC yield on 150 mm silicon wafers using standard semiconductor processing steps exclusively at Eastman Kodak Company in the Image Sensor Solutions B81S Microelectronic Fabrication Facility.

Library of Congress Subject Headings

Optoelectronic devices; Charge coupled devices; Microelectronics

Publication Date

5-30-2003

Document Type

Thesis

Department, Program, or Center

Microelectronic Engineering (KGCOE)

Advisor

Kurinec, Santosh

Comments

Note: imported from RIT’s Digital Media Library running on DSpace to RIT Scholar Works. Physical copy available through RIT's The Wallace Library at: TA1750 .F856 2003

Campus

RIT – Main Campus

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