Publication Date
1998
Document Type
Paper
Abstract
This project investigated the feasibility of 157-nm Vacuum UltraViolet (VUV) Lithography and its’ possible utilization as a future source to extend the capabilities of optical lithography. In addition, this project undertook the initialization of VUV lithography here at JUT by the conversion of a 193-nm ArF excimer laser to a 157-nm F2 excimer laser source. The investigation of the completed body of work on 157-nm lithography led to the conclusion that this technology is viable and may represent the last frontier with respect to optical lithography. The excimer laser at RIT was successfully retrofitted for 157-nm operation and exhibited RIT’s first excitation at this wavelength on May 11, 1998.
Recommended Citation
Porter, Brian Lee
(1998)
"Preparation of RIT for 157-nm Lithography,"
Journal of the Microelectronic Engineering Conference: Vol. 8:
Iss.
1, Article 14.
Available at:
https://repository.rit.edu/ritamec/vol8/iss1/14