Publication Date
1997
Document Type
Paper
Abstract
The technique of spectroscopic ellipsometry was employed to study the effects of residual solvents in chemically amplified photoresists on the dissolution characteristics and optical constants of the spin-cast film. Ellipsometric measurements were made for resist films with no bake, with soft bakes, and with both soft bakes and post-exposure bakes, at various baking temperatures. Exposures of these films were performed using a KrF excimer laser (248 nm) with a beam splitter lens element to increase the exposure area. To increase the accuracy of the experimental data, measurements were made at three different angles over a sampling wavelength range of 200 nm to 800 nm. Resist thickness and optical parameters (n and k) were extracted by fitting the experimental data to a theoretical model.
Recommended Citation
Chan, Michael Y.
(1997)
"Resist Performance Using Spectroscopic Ellipsometry,"
Journal of the Microelectronic Engineering Conference: Vol. 7:
Iss.
1, Article 18.
Available at:
https://repository.rit.edu/ritamec/vol7/iss1/18