An attempt is made at the preparation of silicon-on-insulator (SOl) substrates suitable for device fabrication. This is done by the high temperature bonding of a pair of silicon wafers upon which oxide layers have been thermally grown. One of the pair is then ground back to a suitable thickness. Bonding strength and defects are also evaluated.
Meshelle, Bart U.
"SOI via Wafer Bonding,"
Journal of the Microelectronic Engineering Conference: Vol. 7:
1, Article 13.
Available at: https://scholarworks.rit.edu/ritamec/vol7/iss1/13