I studied the effect of wafer topography on the chemical mechanical polishing (CMP) process. This was done by first designing test structures. A mask set of these structures was then designed and fabricated. Wafers were patterned with the test mask and then were polished. The result was that a pattern dependency was seen on the wafers. The polishing process was effected by the surface topography.
Dobek, Stanley J.
"Test Patterns for Chemical Mechanical Polish Characterization,"
Journal of the Microelectronic Engineering Conference: Vol. 7:
1, Article 10.
Available at: https://scholarworks.rit.edu/ritamec/vol7/iss1/10