Publication Date
1996
Document Type
Paper
Abstract
Bonding and Etchback Silicon on Insulator wafers were successfully developed at the Rochester Institute of Technology's Microelectronics facilities. [100] and [111] wafer pairs were successfully bonded using SOG and Thermal Oxides and etched back using times KOH etch. The results were successfully bonded wafer with a large Silicon layer.
Recommended Citation
Mozumder, Bobby
(1996)
"Development of Bonding and Etchback Silicon on Insulator Wafers,"
Journal of the Microelectronic Engineering Conference: Vol. 6:
Iss.
1, Article 8.
Available at:
https://repository.rit.edu/ritamec/vol6/iss1/8