Bonding and Etchback Silicon on Insulator wafers were successfully developed at the Rochester Institute of Technology's Microelectronics facilities.  and  wafer pairs were successfully bonded using SOG and Thermal Oxides and etched back using times KOH etch. The results were successfully bonded wafer with a large Silicon layer.
"Development of Bonding and Etchback Silicon on Insulator Wafers,"
Journal of the Microelectronic Engineering Conference: Vol. 6
, Article 8.
Available at: https://scholarworks.rit.edu/ritamec/vol6/iss1/8