The primary objective of this investigation was to obtain maximum electron beam resist contrast (gamma), maximum sensitivity, minimum thickness loss, and maximum plasma etch resistance for 10 KeV electron beam exposure process. This is to be achieved while maintaining a robust design. This study also compares the etch resistivity and etch rate of different electron beam resist materials to O2, Cl2, and SF6 containing plasma conditions. Measurements of the resist thickness loss yield the results of resist sensitivity and gamma for various development conditions
Cao, Huy M.
"Investigation of New Positive and Negative Electron Beam Resists for Microlithography,"
Journal of the Microelectronic Engineering Conference: Vol. 6
, Article 15.
Available at: https://scholarworks.rit.edu/ritamec/vol6/iss1/15