Role of Hydrogen at the Si/SiO2 Interface on MOS CV Characteristics

Authors

Rahul Sachdev

Publication Date

1996

Document Type

Paper

Abstract

In this study an attempt has been made to investigate the effect of intentional doping of hydrogen near the Si/SiO₂ interface by ion implantation. MOS capacitors were fabricated with a composite stacked dielectric of thermally grown SiO^₂ and LPCVD nitride with and without H-implantation. Poly gate capacitors fabricated on both N and P type silicon wafers showed no significant change with hydrogen implant. Effect of hydrogen was distinct in aluminum gate structures.

Recommended Citation

Sachdev, Rahul (1996) "Role of Hydrogen at the Si/SiO2 Interface on MOS CV Characteristics," Journal of the Microelectronic Engineering Conference: Vol. 6: Iss. 1, Article 13.
Available at: https://repository.rit.edu/ritamec/vol6/iss1/13