Publication Date
1991
Document Type
Paper
Abstract
~ Split Split Plot Design was implemented to investigate the relationship between the ion implantation conditions and the complex refractive index of the inherent damage layer. Four factors chosen to evaluate this relationship were wafer orientation, dose concentration, implant acceleration potential, and screen oxide thickness. The response variable was the complex refractive index of the damaged layer measured by ellipsometry. Results indicate that there is a relationship between the dose concentration and the response variable that is most sensitive to doses between 5e13 ions/cm2 and 5e15 ions/cm2. However, the range of the refractive index increases considerably in this range to prevent the implementation of this method as an evaluation tool.
Recommended Citation
Drennan, Patrick G.
(1991)
"an Ellipsometeric Evaluation of Ion Implanted Silicon,"
Journal of the Microelectronic Engineering Conference: Vol. 5:
Iss.
1, Article 5.
Available at:
https://repository.rit.edu/ritamec/vol5/iss1/5