Chemically Amplified Advanced Negative Resist for G line application was evaluated under three different Post Exposure Bake temperatures. The photospeed increased from 22mj/cm*2 to lOmj/cm*2 as the post exposure bake temperature was increased from 120C to 140C. A contrast of approximately 2.0 was obtained for all three treatments, as opposed to the expected value of 4.0. The Optical evaluation of line and space. patterns suggested the 120C post exposure bake temperature will give wider exposure process latitude than 130C or 140C temperatures. The resist exhibited high sensitivity below 3Omj/cm*2 with wide exposure process latitude around 2Omj/cm*2.
Wang, Shu Tsai
"Characterization of Chemically Amplified Advanced Negative Resist for G Line Application,"
Journal of the Microelectronic Engineering Conference: Vol. 5
, Article 27.
Available at: https://scholarworks.rit.edu/ritamec/vol5/iss1/27