A portable conformable mask (PCM) system employing KTIS2O as the imaging layer and PMMA, a deep UV sensitive photoresist, as the planarizing layer was investigated. Process parameters of a PMMA prebake at 185’C and methanol soak of 90 seconds achieved a resolution of 2.16 microns. The PCM system was able to achieve better results than a single layer system with regards to resolution and linewidth control.
Boehm, Mark A.
"Bi-Layer Deep UV Resist System,"
Journal of the Microelectronic Engineering Conference: Vol. 4
, Article 5.
Available at: https://scholarworks.rit.edu/ritamec/vol4/iss1/5