Publication Date
1990
Document Type
Paper
Abstract
A Tegal 700 plasma etcher was used to etch trenches in (100) p-type silicon wafers using a SF6102 plasma. Silicon etch rates of approximately 1.17 microns/minute and a Si:Si02 selectivity ratio of 22.0 were obtained. Scanning Electron Micrographs show the etch was isotropic in nature with an aspect ratio of approximately 2:1.
Recommended Citation
Waskiewicz, Christopher J.
(1990)
"Preliminary Formation of Deep Trench Capacitors,"
Journal of the Microelectronic Engineering Conference: Vol. 4:
Iss.
1, Article 38.
Available at:
https://repository.rit.edu/ritamec/vol4/iss1/38