Three oxidation processes were employed to study the effects of chlorine on growth rate and device characteristics of capacitors. Oxide was grown without the use of TCA, with TCA prior to growth, and TCA during growth. An increased growth rate of the oxide, 450 angstroms in 42 minutes with TCA, as opposed to 50 minutes without TCA, was observed. Contrary to what was expected, the TCA processed oxides larger flatband shifts than the standard oxide growth wafers.
Ballak, Jeffrey J.
"Studies of Chlorinated Oxides,"
Journal of the Microelectronic Engineering Conference: Vol. 4:
1, Article 3.
Available at: https://scholarworks.rit.edu/ritamec/vol4/iss1/3