Microfabrication of Field Emitter Tips for Vacuum Microelectronic Devices

Authors

Joseph A. Johnson

Publication Date

1990

Document Type

Paper

Abstract

Potassium hydroxide (KOR) etching was used to create four sided pyramids for potential use in vacuum microelectronic devices. Optimal structures were found to be approximately 2 microns on a side and 2.2 microns high. KOM etched the silicon at 1200 A/mm in the vertical direction. A slight overetch period insured that the oxide mask was undercut completely away and the pyramids came to a sharp point, but were not attacked. Surface damage as a result of the KOH etching was minimal.

Recommended Citation

Johnson, Joseph A. (1990) "Microfabrication of Field Emitter Tips for Vacuum Microelectronic Devices," Journal of the Microelectronic Engineering Conference: Vol. 4: Iss. 1, Article 23.
Available at: https://repository.rit.edu/ritamec/vol4/iss1/23