Publication Date
1990
Document Type
Paper
Abstract
A nine stage PMOS ring oscillator was designed using polysilicon gates for a self-aligning process while another was designed using a standard metal gate process. A comparison of the polysilicon and metal gate PMQS processes was planned to show the reduced gate capacitance of the self-aligning process. This reduced gate capacitance was to be observed by measuring and comparing the propagation delay of each design on the oscilloscope.
Recommended Citation
Gerber, Kurt E.
(1990)
"Polysilicon vs. Aluminum Gate PMOS Ring Oscillators,"
Journal of the Microelectronic Engineering Conference: Vol. 4:
Iss.
1, Article 16.
Available at:
https://repository.rit.edu/ritamec/vol4/iss1/16