An electrically erasable programmable read only memory (EEPROM) device, utilizing a double polysilicon structure was designed. An extremely thin gate oxide (100 ) was required to allow for Fowler-Nordheim tunneling. Thin oxide polysilicon gate capacitors were fabricated, and evidence of tunneling was existent. However, the oxide integrity was generally poor, and processing did not proceed past this point
"Design of a EEPROM Cell and Thin Oxide Evaluation,"
Journal of the Microelectronic Engineering Conference: Vol. 3
, Article 27.
Available at: https://scholarworks.rit.edu/ritamec/vol3/iss1/27