In present day electronic systems a basic building block is the operational amplifier. Therefore, a better understanding of characteristics of Op-Amps and their importance to overall circuit operation is essential. In the electronics industry manufacturers supply data sheets for the IC’s they produce. These data sheets provide a wealth of information: absolute maximum ratings, intended applications, electrical characteristics, performance limitations, equivalent circuits of devices, and more. These defined parameters make the design of more complex systems a much easier task. As do manufacturers in the industry so too must RIT characterize their devices. This project will characterize the important parameters of an All Enhancement Pmos Op-Amp designed and fabricated using RIT’s standard 10 micron design rules and pmos metal gate process. More specifically, the parameters characterized will be the input offset voltage, output offset voltage, input voltage range, output voltage swing, supply voltage rejection ratio, large signal voltage gain, common mode gain, common mode rejection ratio, power consumption, and slew rate. These parameters will be defined, measured, and compared to a SPICE simulation for the given Op-Amp.
Lewis, David L.
"The Characterization of an All Enhancement PMOS OP-AMP,"
Journal of the Microelectronic Engineering Conference: Vol. 3
, Article 21.
Available at: https://scholarworks.rit.edu/ritamec/vol3/iss1/21