Publication Date
4-2019
Document Type
Paper
Abstract
A first attempt at fabricating AlGaN/GaN High Electron Mobility Transistors (HEMTs) on a Si substrate was made at RIT. A basic process flow was developed to fabricate enhancement-mode devices. The proposed fabrication flow was attempted and completed. The single metallization step using Ni as the metal yielded Schottky contacts in source, drain and gate regions.
Recommended Citation
Gopal Thirupakuzi Vangipuram, Vijay
(2019)
"Fabrication of AlGaN/GaN High Electron Mobility Transistors,"
Journal of the Microelectronic Engineering Conference: Vol. 25:
Iss.
1, Article 5.
Available at:
https://repository.rit.edu/ritamec/vol25/iss1/5