Publication Date
4-2019
Document Type
Paper
Abstract
The goal of fabricating sub-300 nm fins with the implementation of self-aligned double patterning (SADP) at Rochester Institute of Technology’s (RIT’s) Semiconductor & Microsystems Fabrication Laboratory (SMFL) was not realized completely. An energy dose meander was completed in order to qualify a new resist being used with the fabrication process that Christopher O’Connell developed for his graduate thesis. Manual spin coating of Spin-on-Carbon (SOC), bottom antireflective coating (BARC), and photoresist were all qualified. A 2:1 ratio of AZ MiR 701 photoresist to PGMEA was used to thin the resist for implementation of a 300 nm coat. Low pressure chemical vapor deposition (LPCVD) of silicon nitride as a spacer material was qualified with a ~6.4 nm/s deposition rate and a film etch rate of ~0.3 nm/s. Oxide deposition by in Applied Materials’ P5000 TEOS chamber was qualified with an ~8.8 nm/s deposition rate and a ~3.2 nm/s etch rate in the magnetically enhanced reactive ion etch (MERIE) etch chamber of the same P5000 tool cluster. In the RIE chamber, an etch rate of ~0.8 nm/s was qualified for the BARC layer. Ultimately, the oxide mandrels appeared to lack essential vertical sidewalls.
Recommended Citation
Weiskittel, Kelly
(2019)
"Fabrication of Sub-300 nm Fins at RIT by SADP,"
Journal of the Microelectronic Engineering Conference: Vol. 25:
Iss.
1, Article 26.
Available at:
https://repository.rit.edu/ritamec/vol25/iss1/26