Journal of the Microelectronic Engineering Conference | Vol 25 | Iss 1

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Microelectronic Engineering Conference 2019

Papers

Fabrication of Photonic LPCVD Silicon-Nitride Waveguides
Robert Dalheim

Fabrication of AlGaN/GaN High Electron Mobility Transistors
Vijay Gopal Thirupakuzi Vangipuram

Etching process characterization of Nitride layer and Poly silicon layer using TRION III Etcher
Sudmun Habib

Transfer Process with 2D Transitional metal Dichalcogenides Materials
William Huang

Capping Layers for Increased Thermal Stability of IGZO Thin-Film Transistors
Jason Konowitch

Biristor Array Investigation
Jeremiah Leit

FeFET Process Integration and Characterization
Jordan Merkel

Fabrication of Sub-300 nm Fins at RIT by SADP
Kelly Weiskittel

Posters

Fabrication of AlGaN/GaNHigh Electron Mobility Transistors
Vijay Gopal T.V.

Etching process characterization of nitride and polysilicon layer using trionIII Etcher
Sudmun Habib

Transfer Process with 2D Transitional Metal Dichalcogenides Materials
William Huang

Capping Layers for Increased Thermal Stability of IGZO Thin-Film Transistors
Jason Konowitch

Biristor Array Investigation
Jeremiah Dyson Leit

FeFET Fabrication and Characterization at RIT
Jordan Merkel

Fabrication of Sub-300 nm Fins at RIT by SADP
Kelly Weiskittel

Fabrication of Photonic LPCVD Silicon Nitride Waveguides
Robert Dalheim

Presentations

Fabrication of Photonic LPCVD Silicon-Nitride Waveguides
Robert Dalheim

Fabrication of AlGaN/GaN HEMTs
Vijay Gopal

ETCHING PROCESS CHARACTERIZATION OF NITRIDE LAYER AND POLY SILICON LAYER USING TRION III ETCHER
Sudmun Habib

CAPPING LAYERS FOR INCREASED THERMAL STABILITY OF IGZO THIN-FILM TRANSISTORS
Jason Konowitch

LivAbilityLab sponsored project:Force and Position Monitoring System Multidisciplinary Senior Design 1
Nick Petreikis

Super Activation Obtained by Melt UV Laser Annealing of Highly Surface-Segregated Dopants in High Ge Content SiGe
Leonard M. Rubin

Single Electron Transistors for Molecular Computer Readout
Matthew Filmer

Biristor Array Investigation
Jeremiah Leit

FeFET Fabrication and Characterization at RIT
Jordan Merkel

Demonstration of Record-High mm-Wave Power Performance using N-Polar Gallium Nitride HEMTs
Brian Romanczyk

Transfer Process with 2-Dimensional Transitional Metal Dichalcogenides Materials
William Huang

Fabrication of Sub-300nm Fins at RIT by SADP
Kelly Weiskittel