Thin film transistors were fabricated to investigate the influence of the addition of a fluorine preamorphization implant on boron activation in the source/drain. The addition of the fluorine resulted in a higher drive current for high dose implants (5x1015 cm-2). The higher current as well as an increased calculated mobility supports the hypothesis that fluorine implant increases boron activation. Device performance was noticed to be dependent on its location on the wafer complicating experimental analysis. Additional system control would allow for more direct treatment comparisons.
"Enhanced Boron Activation in Xenon Flash Lamp Annealed Polysilicon Through Pre-Amorphization,"
Journal of the Microelectronic Engineering Conference: Vol. 24
, Article 41.
Available at: https://scholarworks.rit.edu/ritamec/vol24/iss1/41