This research looks at the design and fabrication of sub 100-nm carbon nanotube-based vacuum field emission devices. The devices in this project are based in the Fowler-Nordheim emission of electrons, which allow the devices to hold radiation hardened capabilities due the absence of a semiconductor channel. On top of the radiation hardened capabilities of the Vacuum FETS, the emitter material, SWCNT (Single-Wall Carbon Nanotubes) themselves hold radiation hardened capabilities. SWCNT could also be the nanomaterial that replaces silicon in CMOS FETs (Field-Effect- Transistors). Through extensive preparation and testing, a field emission device based on carbon nanotube emitters with an effectiv anode-to-cathode distance of 100 nm was designed, fabricated, and tested.
"Vacuum Field Emission Devices with Integrated CNTs,"
Journal of the Microelectronic Engineering Conference: Vol. 24
, Article 34.
Available at: https://scholarworks.rit.edu/ritamec/vol24/iss1/34