The goal of this project was to fabricate MOSFETs on InGaAs with an Al2O3 gate dielectric deposited with ALD. The initial structure of the device was planned out, the process was designed, and then each step of the process was characterized prior to the fabrication of the devices. The devices were fabricated, and then electrically tested. Each of the separate processes were shown to be repeatable and accurate. Errors with design rules in the mask lay- out led to shorting of the devices from source to drain, however the gate was found to be electrically isolated.
"Fabrication of MOSFETs on InGaAs with Al2O3,"
Journal of the Microelectronic Engineering Conference: Vol. 24
, Article 10.
Available at: https://scholarworks.rit.edu/ritamec/vol24/iss1/10