Home > RITAMEC > Vol. 22 (2017) > Iss. 1
Publication Date
5-8-2017
Document Type
Presentation
Recommended Citation
Omar, Salwan
(2017)
"Process Development of Sidewall Spacer Features for sub-300nm Dense Silicon FinFETs,"
Journal of the Microelectronic Engineering Conference: Vol. 22
:
Iss.
1
, Article 31.
Available at:
https://scholarworks.rit.edu/ritamec/vol22/iss1/31