Optimization of Transmission Line Measurement (TLM) Structures for Specific Contact Resistivity Determination

Authors

Sidhant Grover, Rochester Institute of Technology

Publication Date

2016

Document Type

Paper

Abstract

Low resistance ohmic contacts are of extreme importance to modern semiconductor devices. As device sizes continue to shrink, it implies a reduction in the specific contact resistance p_c. There are various methods for the measurement of p_c, however the Transmission Line Model (TLM) is most popularly used to determine the specific contact resistivity for Integrated Circuits (IC) and Silicon Photovoltaics (PV) applications. Inconsistencies have been observed in literature between IC and PV devices as p_c determination may depend on dimensions. Therefore, TLM test geometries need to optimized in order to minimize error. Optimimum values of TLM widths were fabricated and tested and systematic error was compared with that from simulations.

Recommended Citation

Grover, Sidhant (2016) "Optimization of Transmission Line Measurement (TLM) Structures for Specific Contact Resistivity Determination," Journal of the Microelectronic Engineering Conference: Vol. 22: Iss. 1, Article 18.
Available at: https://repository.rit.edu/ritamec/vol22/iss1/18