Publication Date
1988
Document Type
Paper
Abstract
This project was a preliminary study of an aluminum/dielectric/aluminum multilayer metallizatiOn scheme. Polyimide and spin on glass were compared using high frequency CV analysis on fabricated capacitors. The simple processing involved showed that good crack-free and adhesive fil s could be formed with both materials although the polyimide was the more ideal CV characteristics. Test masks were generated to measure via resistance and dielectric breakdown in a bi-level structure. The Spin on Glass processing was unsuccessful because of underetching of vias. The polyimide processing was successful displaying good breakdown characteristics but high via resistances.
Recommended Citation
Carneiro, Manuel N.
(1988)
"Multilevel Metallization at RIT,"
Journal of the Microelectronic Engineering Conference: Vol. 2:
Iss.
1, Article 6.
Available at:
https://repository.rit.edu/ritamec/vol2/iss1/6