Capacitance-Voltage (C-V) arid Conductance-Voltage (G-V) measurements were performed to characterize field induced charges in thin (300A) oxides subjected to a RF generated oxygen plasma used to remove photoresist. Results based on C-V curves indicate a -4.6V threshold voltage shift for capacitors exposed to the RF plasma as compared to capacitors without plasma processing. Results based on tunnel current measurements were inconclusive.
Ostling, Patricia A.
"Evaluation of Plasma Damage to Thin Gate Oxides,"
Journal of the Microelectronic Engineering Conference: Vol. 2:
1, Article 26.
Available at: https://scholarworks.rit.edu/ritamec/vol2/iss1/26