Implementation of a Controllable Process for the RIE Etching of Si02 at RIT

Authors

David Jendresky

Publication Date

1988

Document Type

Paper

Abstract

An Electrotech Plasmafab 425 reactor was brought on line to perform reactive ion etching (RIE). Samples of Si02 over Si were etched. Results show 400 angstroms/minute using a combination of freon 23 and oxygen as the etchant with good visual uniformity. A selectivity of 6:1 for Si02:Si was achieved.

Recommended Citation

Jendresky, David (1988) "Implementation of a Controllable Process for the RIE Etching of Si02 at RIT," Journal of the Microelectronic Engineering Conference: Vol. 2: Iss. 1, Article 18.
Available at: https://repository.rit.edu/ritamec/vol2/iss1/18