The objective of this study is to gain understanding of MOS devices built on germanium. Ge PMOS transistors were simulated using Silvaco. MOS capacitors have been fabricated using hafnium oxide, a high-K dielectric, and molybdenum, a metal gate. The capacitance-voltage (CV) characteristics of the devices were obtained and studied. During the deposition of hafnium oxide on germanium substrate, the surface integrity plays a significant role. Two different surface treatments for the Ge substrates were implemented: one with NH3 immersion at 650°C for one minute, the other with a deionized (DI) water rinse for one minute. In doing so, one can examine how nitrogen passivation prior to the dielectric deposition impacts device performance compared to a standard rinse with DI water.
Gupta, Rahul K.
"Fabrication of Metal-High-k Capacitors on Germanium (May 2008),"
Journal of the Microelectronic Engineering Conference: Vol. 17
, Article 5.
Available at: https://scholarworks.rit.edu/ritamec/vol17/iss1/5