The following experiment was completely in order to analyze and quantify the influence implantation dose and post implant anneal conditions have on the source and drain regions of a typical transistor. A DOE experiment was designed to investigate three different variations in each the implantation dose and post implant anneal temperatures of the source and drain regions of the advanced CMOS process transistor at RIT. Electrical characterization was used to obtain quantifiable results for each experimental variation. The experiment was successful in manufacturing a complete analysis for variations in the source and drain doping profile.
"Characterization of P-N Junctions for Variation in Dose and Annealing Temperatures (May 2008),"
Journal of the Microelectronic Engineering Conference: Vol. 17
, Article 19.
Available at: https://scholarworks.rit.edu/ritamec/vol17/iss1/19