Fabrication and Characterization of Silicon Nitride Sacrificial replacement Gate Technology

Authors

Elias Mohammad Ullah

Publication Date

2002

Document Type

Paper

Abstract

Silicon Nitride (Si₃N₄) sacrificial replacement gate were fabricated using the nitride cast method. The purpose of the Si₃N₄ cast was to develop a stand-in gate, which is then replaced by metal after source/drain formation. The technique was developed by using hot phosphoric acid etch (at 160 ° C) to form nitride cast. The phosphoric acid has nitride etch rate of about 4nm/min and good selectivity over oxide and good uniformity over silicon. A cross sectional analysis was done to view process steps.

Recommended Citation

Ullah, Elias Mohammad (2002) "Fabrication and Characterization of Silicon Nitride Sacrificial replacement Gate Technology," Journal of the Microelectronic Engineering Conference: Vol. 12: Iss. 1, Article 12.
Available at: https://repository.rit.edu/ritamec/vol12/iss1/12