The purpose of the project was to develop a universal procedure for obtaining a cross section of various IC devices, use a Scanning Electron Microscope (SEM) to document these devices, and identify different layers and try to obtain dimensions for the devices. The technique was developed using a mechanical polishing procedure followed by a chemical mechanical polishing step, and worked as expected, producing very good images of the cross section of various film stacks and devices. Wide ranges of devices were analyzed to test the robustness of the process. Film stacks could be measured in both thickness and composition (with the proper equipment), and very clear high magnification images of devices were obtained.
Terrana, Peter G.
"Cross Sectional Analysis of IC Devices Using Polishing techniques and SEM Imaging,"
Journal of the Microelectronic Engineering Conference: Vol. 11
, Article 6.
Available at: https://scholarworks.rit.edu/ritamec/vol11/iss1/6