Lithographic Process Evaluation by CD-SEM

Authors

Jason L. Burkholder

Publication Date

2000

Document Type

Paper

Abstract

In lithography employed in IC fabrication, focus and exposure directly determine the printed resist image. Focus and exposure settings may be optimized with a focus exposure matrix (FEM) in which one parameter is varied by column and the other parameter is varied by row. A focus exposure matrix should be measured on a highly accurate and precise metrology tool, such as a CD-SEM. This experiment was performed using a Canon FPA 2000-i1 stepper, an SSI 150 coat/develop track, and a Hitachi S-6780 CD SEM. ProData was used to graphically analyze the numerical data collected on the CD-SEM. Data collected in this experiment shows that, for the given equipment, varying exposure from 120 to 200 mJ/cm² in 10 mJ/cm² increments and focus from —0.5 to +1.5 microns in 0.25 micron increments gives a CD range beyond the +/-l0% needed.

Recommended Citation

Burkholder, Jason L. (2000) "Lithographic Process Evaluation by CD-SEM," Journal of the Microelectronic Engineering Conference: Vol. 10: Iss. 1, Article 2.
Available at: https://repository.rit.edu/ritamec/vol10/iss1/2