The gain of lateral transistors is calculated with a program entitled "LATERAL". This program uses a profile generated with SUPREM II, and calculates the depletion region edges and the built in potential for the diffused junctions. The effects included are the base width narrowing due to the applied bias and. recombination in the base. The results are compared with measured gains, and show good agreement. The effects of lifetime in the base are seen to show a large affect on the calculated gain.
Estelle, Thomas A.
"Lateral Transistor Gain Calculations,"
Journal of the Microelectronic Engineering Conference: Vol. 1
, Article 8.
Available at: https://scholarworks.rit.edu/ritamec/vol1/iss1/8