Publication Date
1987
Document Type
Paper
Abstract
This experiment compared oxides grown at 950 C for 135 minutes and 1100 C for 15 minutes in dry 02. Two different size capacitors were fabricated with gate areas of .OlfOO crrf and ,0225 cm? • The films were compared by capacitance - voltage measurements. It was found that the 1100 C process yielded a flat band voltage shift of l volt less than the 950 C process.
Recommended Citation
Bluff, Brian J.
(1987)
"Comparison of Silicon Dioxide Films,"
Journal of the Microelectronic Engineering Conference: Vol. 1:
Iss.
1, Article 4.
Available at:
https://repository.rit.edu/ritamec/vol1/iss1/4