Description
New applications of evanescent imaging for microlithography are introduced. The use of evanescent wave lithography (EWL) has been employed for 26nm resolution at 1.85NA using a 193nm ArF excimer laser wavelength to record images in a photoresist with a refractive index of 1.71. Additionally, a photomask enhancement effect is described using evanescent wave assist features (EWAF) to take advantage of the coupling of the evanescent energy bound at the substrate-absorber surface, enhancing the transmission of a mask opening through coupled interference.
Date of creation, presentation, or exhibit
3-15-2006
Document Type
Conference Paper
Department, Program, or Center
Microelectronic Engineering (KGCOE)
Recommended Citation
Bruce W. Smith, Yongfa Fan, Jianming Zhou, Neal Lafferty, Andrew Estroff, "Evanescent wave imaging in optical lithography", Proc. SPIE 6154, Optical Microlithography XIX, 61540A (15 March 2006); doi: 10.1117/12.657322; https://doi.org/10.1117/12.657322
Campus
RIT – Main Campus
Comments
Copyright 2006 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
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