A Talbot interference immersion lithography system that uses a compact prism is presented. The use of a compact prism allows the formation of a fluid layer between the optics and the image plane, enhancing the resolution. The reduced dimensions of the system alleviate coherence requirements placed on the source, allowing the use of a compact ArF excimer laser. Photoresist patterns with a half-pitch of 45 nm were formed at an effective NA of 1.05. In addition, a variable-NA immersion interference system was used to achieve an effective NA of 1.25. The smallest half-pitch of the photoresist pattern produced with this system was 38 nm.
Date of creation, presentation, or exhibit
Department, Program, or Center
Microelectronic Engineering (KGCOE)
Anatoly Bourov, Yongfa Fan, Frank Charles Cropanese, Neal Vincent Lafferty, Lena V. Zavyalova, Hoyoung Kang, Bruce W. Smith, "Immersion microlithography at 193 nm with a Talbot prism interferometer", Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); doi: 10.1117/12.537350; https://doi.org/10.1117/12.537350
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