Description
A track-mounted, in-situ Dissolution Rate Monitor (DRM) is used to study the impact of exposure variations on g-line, i-line and DUV positive chemically-amplified resists. In the i-line case, a comparative study between constant spray and a spray/puddle process was undertaken. In all cases, modeling parameters were extracted from the track-mounted DRM data and entered into 2D and 3D simulators using an experimentally-generated Development Rate vs. PAC concentration table. Simulated profiles were compared with actual SEM cross-sections. Whenever possible, DRM traces were used to analyze standing waves, surface inhibition effects and quantify resist performance by calculating contrast. For the g-line case, the impact of PEB temperature upon the standing wave effects, as quantified by the in-situ DRM data, was studied.
Date of creation, presentation, or exhibit
6-9-1995
Document Type
Conference Paper
Department, Program, or Center
Microelectronic Engineering (KGCOE)
Recommended Citation
Saraubh Dutta Chowdhury, David W. Alexander, Mark Goldman, Alan W. Kukas, Nigel R. Farrar, Clifford H. Takemoto, Bruce W. Smith, Linard Karklin, "Photolithography process characterization and 3D simulation using track-mounted development rate monitor data", Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); doi: 10.1117/12.210364; https://doi.org/10.1117/12.210364
Campus
RIT – Main Campus
Comments
Copyright 1995 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
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