Si-based resonant bipolar transistors are demonstrated by the monolithic vertical integration of Si-based resonant interband tunnel diodes atop the emitter of Si/SiGe heterojunction bipolar transistors ~HBTs! on a silicon substrate. In the common emitter configuration, IC versus VCE shows negative differential resistance characteristics. The resulting characteristics are adjustable peak-to-valley current ratios, including infinite and negative values, and tailorable peak current densities by the control of the HBT base current under room temperature operation. With the integrated RITD-HBT combination, latching properties which are the key operating principle for high-speed mixed-signal, memory, and logic circuitry, are experimentally demonstrated.
Department, Program, or Center
Microelectronic Engineering (KGCOE)
S.-Y. Chung, N. Jin, P. R. Berger, R. Yu, P. E. Thompson, R. Lake, S. L. Rommel, and S. K. Kurinec, Appl. Phys. Lett. 84, 2688 (2004). https://doi.org/10.1063/1.1690109
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