Abstract
Data-intensive applications such as Deep Learning, Big Data, and Computer Vision have resulted in more demand for on-chip memory storage. Hence, state of the art Systems on Chips (SOCs) have a memory that occupies somewhere between 50% to 90 % of the die space. Extensive Research is being done in the field of memory technology to improve the efficiency of memory packaging. This effort has not always been successful because densely packed memory structures can experience defects during the fabrication process. Thus, it is critical to test the embedded memory modules once they are taped out. Along with testing, functional verification of a module makes sure that the design works the way it has been intended to perform. This paper proposes a built-in self-test (BIST) to validate a Dual Port Static RAM module and a complete layered test bench to verify the module’s operation functionally. The BIST has been designed using a finite state machine and has been targeted against most of the general SRAM faults in a given linear time constraint of O(23n). The layered test bench has been designed using Universal Verification Methodology (UVM), a standardized class library which has increased the re-usability and automation to the existing design verification language, SystemVerilog.
Publication Date
5-2018
Document Type
Master's Project
Student Type
Graduate
Degree Name
Electrical Engineering (MS)
Department, Program, or Center
Electrical Engineering (KGCOE)
Advisor
Mark A. Indovina
Advisor/Committee Member
Sohail A. Dianat
Recommended Citation
Mohan Dass, Manikandan Sriram, "Design and Verification of a Dual Port RAM Using UVM Methodology" (2018). Thesis. Rochester Institute of Technology. Accessed from
https://repository.rit.edu/theses/9792
Campus
RIT – Main Campus
