Chung-Ta Wu

Abstract

An antireflection coating (ARC) containing polyvinyl alcohol and two dyes was applied to a substrate to form a new multilayer resist system.

Based on the results of the application of the ARC on a planar aluminum substrate, an increase of the latitude of exposure and an improvement of the resist image quality were found.

The ARC had a specific concentration of dyes and a specific thickness. The image was a 1.0 µm line and space pattern. By using the ARC, even though the resist thickness varied from 1.2 µm to 1.5 µm, the resulting 1.0 µm image remained within a ±10% tolerance range.

This result was then used to apply the ARC technique on an uneven aluminum substrate with a 0.5 µm height step. The final aluminum image was obtained by transferring the positive resist image to the aluminum film. The ARC film can be etched by using the same plasma etching as was used for the aluminum film without extra processing steps. Electron micrographs of 1.0 µm line images of resist and aluminum with the ARC technique were compared with the resist and aluminum 1.0 µm line images without ARC as a demonstration of the effectiveness of this technique in improving image quality.

Library of Congress Subject Headings

Photoresists

Publication Date

7-1982

Document Type

Thesis

Student Type

Graduate

Department, Program, or Center

School of Photographic Arts and Sciences (CIAS)

Advisor

William Batchelder

Advisor/Committee Member

Ronald Francis

Advisor/Committee Member

Kenneth Harrison

Comments

Physical copy available from RIT's Wallace Library at TR940 .W8 1982

Campus

RIT – Main Campus

Plan Codes

IMGART-MFA

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